ENERGY RELAXATION OF HOT-ELECTRONS IN DEGENERATE P-TYPE III-V SEMICONDUCTORS

Authors
MEZRIN OA FEYGENSON A HAMM RA
Citation
Oa. Mezrin et al., ENERGY RELAXATION OF HOT-ELECTRONS IN DEGENERATE P-TYPE III-V SEMICONDUCTORS, Journal of luminescence, 60-1, 1994, pp. 688-691
Citations number
4
Categorie Soggetti
Optics
Journal title
Journal of luminescence → ACNP
ISSN journal
00222313
Volume
60-1
Year of publication
1994
Pages
688 - 691
Database
ISI
SICI code
0022-2313(1994)60-1:<688:EROHID>2.0.ZU;2-G
Abstract
We found two new phenomena in degenerate p-type GaAs, GaInAs, InP, etc ., semiconductors. First, there is a threshold energy E(th) for inters ubband hole transitions that approximately equals hole Fermi energy. S econd, these intersubband hole transitions suppress plasmon excitation . This leads to a decreased energy loss rate of nonequilibrium electro ns.