ULTRAVIOLET-LASER ABLATION OF SI3N4 THIN-FILMS

Citation
Y. Takigawa et Jc. Hemminger, ULTRAVIOLET-LASER ABLATION OF SI3N4 THIN-FILMS, Applied surface science, 80, 1994, pp. 146-151
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
80
Year of publication
1994
Pages
146 - 151
Database
ISI
SICI code
0169-4332(1994)80:<146:UAOST>2.0.ZU;2-L
Abstract
A Fourier transform ion cyclotron resonance mass spectrometer (FTMS) i s used to identify species ejected from amorphous Si3N4 film surfaces when high-power ArF excimer laser pulses hit them. Two peaks of Si+ an d (Si3N4)2+ ions in the spectra are obtained with the laser pulses hav ing fluence greater than 40 mJ/cm2. The advantage of high mass resolut ion enables us to identify Si+ peaks in spite of the fact that Si+ (m/ q = 27.976928) and N2+ (m/q = 28.0056) ions are discriminated by intro ducing CO+ (m/q = 27.9949) ions. We find, however, that when a large a mount of ions are stored in the cell of FTMS, accurate numbers of ions are not obtained due to a space charge effect.