F. Uesugi et I. Nishiyama, PHOTON ENERGY-DEPENDENCE OF SYNCHROTRON-RADIATION-INDUCED GROWTH SUPPRESSION AND INITIATION IN AL CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 80, 1994, pp. 203-207
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The influence of synchrotron radiation (SR) irradiation on Al chemical
vapor deposition has been studied as a function of SR photon energy.
A clear difference between inner shell electron excitation and valence
electron excitation is observed. Suppression of Al growth on the Si s
urface is found to be induced effectively by the excitation of the inn
er shell electrons, while initiation of the growth on the SiO2 surface
is caused by the excitation of the valence electrons.