PHOTON ENERGY-DEPENDENCE OF SYNCHROTRON-RADIATION-INDUCED GROWTH SUPPRESSION AND INITIATION IN AL CHEMICAL-VAPOR-DEPOSITION

Authors
UESUGI F NISHIYAMA I
Citation
F. Uesugi et I. Nishiyama, PHOTON ENERGY-DEPENDENCE OF SYNCHROTRON-RADIATION-INDUCED GROWTH SUPPRESSION AND INITIATION IN AL CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 80, 1994, pp. 203-207
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
80
Year of publication
1994
Pages
203 - 207
Database
ISI
SICI code
0169-4332(1994)80:<203:PEOSGS>2.0.ZU;2-H
Abstract
The influence of synchrotron radiation (SR) irradiation on Al chemical vapor deposition has been studied as a function of SR photon energy. A clear difference between inner shell electron excitation and valence electron excitation is observed. Suppression of Al growth on the Si s urface is found to be induced effectively by the excitation of the inn er shell electrons, while initiation of the growth on the SiO2 surface is caused by the excitation of the valence electrons.