EXCIMER LASER-INDUCED METALLIZATION FOR IN-SITU PROCESSING ON SI AND GAAS

We have investigated both the large area excimer laser-induced deposit ion of W and its silicides on GaAs to form thermally stable Schottky c ontacts, and the reduction of a Cu(I) compound for the deposition of C u interconnects for Si microelectronics. Using a KrF excimer laser at 25 mJ/cm2 and a mixture of WF6, SiH4 and Ar, metallic W is deposited w ith an average growth rate of 1 angstrom/pulse. For Cu deposition, the reduction by H-2 of the precursor Cu(hfac)(TMVS) under a KrF excimer laser illumination of 9 mJ/cm2 gives metallic Cu with a Cu/C ratio of 4.35. For both processes, possible deposition mechanisms are discussed in terms of gas phase and surface reactions.