A HIGH-RATE OF CHEMICAL-VAPOR-DEPOSITION OF TANTALUM PENTOXIDE FILM INITIATED BY PHOTOEXCITATION

It is demonstrated for the first time that, in CVD using TaCl5 and O2, periodic photoexcitation produces a high rate of Ta2O5 film depositio n during the following interrupted photoexcitation intervals even at a temperature lower than 300-degrees-C. The experimental data indicate that this high rate of film deposition is self-sustaining, once photoe xcited, but is obstructed if evacuation is performed just after the ph otoexcitation interval. A simple model incorporating a vapor phase rea ction process between TaCl5 and O(3P) is proposed as a possible explan ation for this deposition mechanism.