IN-SITU RHEED OBSERVATION ON SURFACE-REACTIONS IN LASER-TRIGGERED CHEMICAL BEAM EPITAXY OF GAP

The surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH 3 was investigated with reflection high-energy electron diffraction (R HEED). The intensity of RHEED showed an abrupt decrease on laser irrad iation followed by gradual recovery. The RHEED intensity recovered fas ter with a higher PH3 flow rate, which indicates that the intensity re covery is related with the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decompo sition of TEGa by laser irradiation and the formation of GaP occur alt ernately under continuous supply of source gases.