PRECURSOR LIFETIME ESTIMATION BY ULTRAVIOLET-LASER MODULATION OF A HYDROGENATED AMORPHOUS-SILICON GROWTH SURFACE

The reaction lifetime of the film precursors on a no-plasma surface of hydrogenated amorphous silicon (a-Si:H) has been evaluated by periodi c deposition and ultraviolet (UV) laser irradiation. The reaction life time of the precursors on the no-plasma surface was estimated to be le ss than 1 s from the change of photoconductivity in the resulting film s as a function of the delay time between deposition and UV laser irra diation. A comparison of the lifetimes of the precursors on the plasma -exposed and no-plasma surface of a-Si: H leads to the conclusion that the reactivities of the precursors are comparable on both surfaces. H owever, UV laser irradiation energizes the precursors which results in an enhancement of the dangling-bond-termination reaction rate.