PHOTO-EXCITED EFFECTS AND THE GROWTH-MECHANISM ON EPITAXIALLY GROWN AL2O3(100) ON SI(100)

Photo-excited effects on epitaxially grown Al2O3(100) on Si(100) were studied using both ArF(193 nm) or KrF(248 nm) excimer laser light, and a radical-oxygen source by a RF-remote plasma. These methods can clar ify the important photo-excited process by separating the reaction pro cesses, which consist of vapor-phase, surface, and substrate excitatio n. In the case of KrF irradiation with TMA and O2, the epitaxial tempe rature and the growth rate did not change drastically. On the other ha nd, epitaxial temperature reductions of 140-degrees-C and 100-degrees- C were observed in the cases of ArF with TMA and O2, and of a RF-remot e O radical source, respectively. Direct photo-excitation of TMA and O 2 is a very important process to reduce the epitaxial temperature of A l2O3 on Si. However, the substrate-excited effect was not so useful in this growth because after the initial growth stage an Al2O3 barrier l ayer prevented the carriers from reaching the growth surface.