PHOTO-CVD OF AL2O3 THIN-FILMS USING A D(2) LAMP

Al2O3 thin films have been deposited by reduced-pressure photo-CVD for the first time using a D2 lamp as excitation source and aluminum-tri- isopropoxide as source material. The measured absorption band of the s ource material vapor overlaps the emission lines of the D2 lamp in the vacuum ultraviolet region. At deposition temperatures below 270-degre es-C, the deposition rate was enhanced and the film qualities such as tan delta and the refractive index were improved. Above 270-degrees-C, in contrast, the effect of the D2 lamp irradiation is not so clear. T hese results are discussed compared with the previous photo-CVD result s obtained using low-pressure Hg lamps as light source.