PHOTOEMISSION-STUDY OF SYNCHROTRON-RADIATION-INDUCED REACTIONS OF TEOS ADSORBED ON SILICON SURFACE

Authors
NIWANO M MIYAMOTO N SIMONS JK FRIGO SP ROSENBERG RA
Citation
M. Niwano et al., PHOTOEMISSION-STUDY OF SYNCHROTRON-RADIATION-INDUCED REACTIONS OF TEOS ADSORBED ON SILICON SURFACE, Applied surface science, 80, 1994, pp. 403-408
Citations number
20
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
80
Year of publication
1994
Pages
403 - 408
Database
ISI
SICI code
0169-4332(1994)80:<403:POSROT>2.0.ZU;2-A
Abstract
We have investigated the synchrotron radiation (SR) induced chemical r eactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si, using photoemission spectroscopy. TEOS adsorbs on the Si surface with its mo lecular structure intact, at least below room temperature. SR in the v acuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon oxide like film, but some carbon remains in the film . Results of irradiation experiments on condensed layers of TEOS and w ater adsorbed on Si at 85 K indicate that the addition of water enhanc es the removal of carbon contamination in the oxide film.