HIGHLY EFFICIENT GENERATION OF HIGH-ENERGY PHOTONS AND LOW-TEMPERATURE OXIDATION OF A CRYSTAL SILICON SURFACE WITH O1D RADICALS

Citation
T. Ueno et al., HIGHLY EFFICIENT GENERATION OF HIGH-ENERGY PHOTONS AND LOW-TEMPERATURE OXIDATION OF A CRYSTAL SILICON SURFACE WITH O1D RADICALS, Applied surface science, 80, 1994, pp. 502-506
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
80
Year of publication
1994
Pages
502 - 506
Database
ISI
SICI code
0169-4332(1994)80:<502:HEGOHP>2.0.ZU;2-E
Abstract
High-energy Photons (Lyman-alpha) with strong intensity can be generat ed by an energy transfer mechanism in He + H-2 mixture plasma. In this mechanism, the initial step is the excitation of helium atoms to the metastable 1s(1)2s1 configuration, and collisional excitation transfer occurs between the excited helium and hydrogen molecules. On the basi s of the mechanism, the generation of high-energy photons due to the R ydberg transition of atomic oxygen is attempted. Both in the He + O2 a nd Ne + O2 mixture plasma, highly efficient generation of high-energy photons (9.5 eV) is observed. In addition, the former mixture generate s O1D radicals which are known as a very active radical, as a by-produ ct of the high-energy photons; the latter generates (OP)-P-3 because o f the lower energy of the metastable state of Ne. Using the O1D radica ls, a low-temperature oxidation of a crystal silicon surface is attemp ted.