T. Ueno et al., HIGHLY EFFICIENT GENERATION OF HIGH-ENERGY PHOTONS AND LOW-TEMPERATURE OXIDATION OF A CRYSTAL SILICON SURFACE WITH O1D RADICALS, Applied surface science, 80, 1994, pp. 502-506
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
High-energy Photons (Lyman-alpha) with strong intensity can be generat
ed by an energy transfer mechanism in He + H-2 mixture plasma. In this
mechanism, the initial step is the excitation of helium atoms to the
metastable 1s(1)2s1 configuration, and collisional excitation transfer
occurs between the excited helium and hydrogen molecules. On the basi
s of the mechanism, the generation of high-energy photons due to the R
ydberg transition of atomic oxygen is attempted. Both in the He + O2 a
nd Ne + O2 mixture plasma, highly efficient generation of high-energy
photons (9.5 eV) is observed. In addition, the former mixture generate
s O1D radicals which are known as a very active radical, as a by-produ
ct of the high-energy photons; the latter generates (OP)-P-3 because o
f the lower energy of the metastable state of Ne. Using the O1D radica
ls, a low-temperature oxidation of a crystal silicon surface is attemp
ted.