Rm. Wilson et al., DEFECT PROCESSES INDUCED BY ELECTRONIC EXCITATION AT HALIDE CRYSTAL-SURFACES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 12-21
Atomic force microscopy (AFM) provides a new topographic view of radia
tion effects near surfaces, complementing earlier electron microscopy
as well as desorption and spectroscopic studies. Potassium iodide crys
tal surfaces have been imaged by AFM while undergoing exposure to ultr
aviolet light in the exciton absorption spectrum. Pronounced erosion a
nd modification of the surface by ultraviolet radiation has been obser
ved with resolution down to approximately 50 nm. Prospects for extendi
ng such measurements to atomic resolution are considered. In related s
tudies of KI under illumination in the exciton region, photoelectron s
pectra reveal photoinduced gap states which appear attributable to F c
enters and alkali clusters. In both of these studies, fourth harmonic
radiation from a Ti:sapphire mode-locked laser has proven especially u
seful because of its tuneability through the strongly absorbing excito
n region of alkali iodides, producing near-surface excitation densitie
s comparable to electron beams.