POLYGONIZATION OF SINGLE-CRYSTALS OF THE FLUORITE-TYPE OXIDE UO2 DUE TO HIGH-DOSE ION-IMPLANTATION

Citation
H. Matzke et al., POLYGONIZATION OF SINGLE-CRYSTALS OF THE FLUORITE-TYPE OXIDE UO2 DUE TO HIGH-DOSE ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 294-300
Citations number
21
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
91
Issue
1-4
Year of publication
1994
Pages
294 - 300
Database
ISI
SICI code
0168-583X(1994)91:1-4<294:POSOTF>2.0.ZU;2-S
Abstract
A transition of the type single crystal-polycrystal has recently gaine d large interest for the fluorite-type oxide UO2. UO2 is todays fuel f or electricity producing nuclear power stations. It is used as sintere d product with a typical grain size of 10 to 15 mum. Above a certain l evel of damage and/or fission products, a grain subdivision process is seen causing each grain to subdivide into 10(4) to 10(5) subgrains (s o-called RIM effect). A parametric study with UO2 single crystals and in situ ion implantation/channeling analysis was performed to investig ate the basic mechanisms of this phenomenon. For most experiments, Xe ions of up to 300 keV energy and up to doses of 1 X 10(17) ions/cm2 we re used. At a given critical dose, dramatic changes of the damage peak in the channeling spectra were seen. Though these peaks eventually re ached the random yield, analysis of the peak shapes in X-ray diffracti on measurements (Omega scans) and channeling angular scan measurements proved that polygonization (rather than amorphization) had occurred c ausing a fine-grained polycrystalline structure with a misalignment be tween grains of a few degrees only. The mechanism of this process is d iscussed in terms of overpressurized gas bubbles causing cleavage and microfractures and the relevance to the technological application is t reated.