H. Matzke et al., POLYGONIZATION OF SINGLE-CRYSTALS OF THE FLUORITE-TYPE OXIDE UO2 DUE TO HIGH-DOSE ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 294-300
A transition of the type single crystal-polycrystal has recently gaine
d large interest for the fluorite-type oxide UO2. UO2 is todays fuel f
or electricity producing nuclear power stations. It is used as sintere
d product with a typical grain size of 10 to 15 mum. Above a certain l
evel of damage and/or fission products, a grain subdivision process is
seen causing each grain to subdivide into 10(4) to 10(5) subgrains (s
o-called RIM effect). A parametric study with UO2 single crystals and
in situ ion implantation/channeling analysis was performed to investig
ate the basic mechanisms of this phenomenon. For most experiments, Xe
ions of up to 300 keV energy and up to doses of 1 X 10(17) ions/cm2 we
re used. At a given critical dose, dramatic changes of the damage peak
in the channeling spectra were seen. Though these peaks eventually re
ached the random yield, analysis of the peak shapes in X-ray diffracti
on measurements (Omega scans) and channeling angular scan measurements
proved that polygonization (rather than amorphization) had occurred c
ausing a fine-grained polycrystalline structure with a misalignment be
tween grains of a few degrees only. The mechanism of this process is d
iscussed in terms of overpressurized gas bubbles causing cleavage and
microfractures and the relevance to the technological application is t
reated.