SURFACE-MORPHOLOGY OF ARSENIC IMPLANTED SILICON DIOXIDE OBSERVED BY ATOMIC-FORCE MICROSCOPY

Authors
WONG TKS WILSON IH
Citation
Tks. Wong et Ih. Wilson, SURFACE-MORPHOLOGY OF ARSENIC IMPLANTED SILICON DIOXIDE OBSERVED BY ATOMIC-FORCE MICROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 639-643
Citations number
16
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
91
Issue
1-4
Year of publication
1994
Pages
639 - 643
Database
ISI
SICI code
0168-583X(1994)91:1-4<639:SOAISD>2.0.ZU;2-3
Abstract
Impact craters 8 nm in diameter and 0.27 nm deep have been observed on As implanted SiO2 surfaces using atomic force microscopy. Unlike thos e on Si, the craters did not have a raised rim, a profile consistent w ith an ion explosion spike mechanism. The bombarded SiO2 surface can b e smoothened by a post-implantation anneal at 400-degrees-C.