Jc. Zhang et al., RADIATION EFFECTS IN TIN DIOXIDE AS GAS SENSORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 663-666
The radiation effects in the process of preparation of SnO2 materials
by a sol-gel method from Sn(OC2H5)4 and on gas sensors of SnO2 have be
en investigated including relationships between gelling time and vicos
ity of the products hydrolyzed and the irradiated doses from 50 to 500
kGy, sensitivity of the gas sensors to ethanol gas etc., and their el
ectrical characteristics. The structural variation of the irradiated p
roducts has been compared with the unirradiated structure by thermal a
nalysis, X-ray diffraction, scanning electron microscopy and transmiss
ion electron microscopy techniques. The phenomena have also been expla
ined by the construction of the oxides and semiconductor theory.