PHOTOCONDUCTIVITY CHARACTERISTICS OF POROUS SILICON

The highly photo-sensitive characteristics of porous silicon (PS) were observed. The transient behaviors of photoconductivity in horizontal and perpendicular directions of PS surface were very different, though both of them include two decay components. The photoconduction spectr a at room temperature and 14.5 K show that characteristics of PS are d ifferent from those of silicon substrate. The difference may be attrib uted to quantum confinement effect ia nano-size microstructures of PS.