CHANNELING ALIGNMENT FOR EPITAXIAL LIGHT-MASS FILM ON HEAVY-MASS SUBSTRATE

A simple procedure for obtaining a background-free backscattering spec trum of a light-mass film on a heavy-mass substrate by a normal incide nce/grazing exit geometry has been described. Using this method such f ilms can be aligned rapidly and accurately, and the impurity or defect information on the films can be obtained without need for realignment . Example is given from MeV Li-3+ analysis of a deposited film of Si o n a single crystal substrate of yttria-stabilized, cubic zirconia.