SURFACE LOCALIZED STATES ON INAS(110)

The initial state band dispersion of the A3, A5 and C2 surface states on InAs(110) has been determined using angle-resolved photoemission sp ectroscopy with synchrotron radiation. The surfaces were grown using m olecular beam epitaxy. Although the measured dispersion of the anion-d erived, dangling-bond A5 surface state is reproduced very well by seve ral surface band structure calculations, the dispersion of the lower l ying C2 surfacc state shows better agreement with surface electronic s tructure calculations based upon density functional theory. Furthermor e, although the binding energy of the A3 state near XBAR is reproduced very well by tight-binding calculations, the band gradient along the GAMMAXBAR azimuth is reproduced best by calculations based on density functional theory. It is argued that the measured dispersion of the lo wer lying A3 and C2 states could be used to provide a stringent test o f quasi-particle surface band structure calculations.