CONDUCTION-BAND SPIN SPLITTING OF TYPE-I GAXIN1-XAS INP QUANTUM-WELLS

The spin-splitting factor g of the electrons at the very bottom of th e conduction band in strained GaxIn1-xAs/InP type-I quantum wells is r eported. Experimental proof of quantum confinement-dependent anisotrop y of g is given. Changing the alloy composition at fixed quantization , equivalent to introducing compressive and tensile strain, changes g . The values of g perpendicular to the quantum-well plane can be expl ained in a model calculation. Apparently however, no quantitative theo ry on which to base the calculation of the anisotropic spin splitting is at present available.