THIN-FILMS OF BORON-NITRIDE GROWN BY CVD

For the first time, thin films of boron nitride were deposited by chem ical vapour deposition on to polished silicon and other metal substrat es using the inorganic compound H3BNH3 (aminodiborane) and ammonia as carrier gas. The substrate temperature was varied from 400 to 600-degr ees-C. The films were chemically inert and adherent to the substrates. The FTIR spectrum. of the film showed B-N-B absorption at 800 cm-1, B -N stretching at 1056 cm-1, and also a weak absorption at 1340 cm-1 co rresponding to B-N-B bending vibration. Deposited films also exhibited X-ray diffraction pattern with interplanar spacing with (002) plane o f hexagonal boron nitride.