ORIGIN OF SURFACE-STATE PHOTOEMISSION INTENSITY OSCILLATION DURING SIEPITAXIAL-GROWTH ON A SI(100) SURFACE

Authors
ENTA Y HORIE T MIYAMOTO N TAKAKUWA Y SAKAMOTO H KATO H
Citation
Y. Enta et al., ORIGIN OF SURFACE-STATE PHOTOEMISSION INTENSITY OSCILLATION DURING SIEPITAXIAL-GROWTH ON A SI(100) SURFACE, Surface science, 313(1-2), 1994, pp. 120000797-120000800
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
313
Issue
1-2
Year of publication
1994
Pages
120000797 - 120000800
Database
ISI
SICI code
0039-6028(1994)313:1-2<120000797:OOSPIO>2.0.ZU;2-Z
Abstract
We performed ''in-situ'' ultraviolet photoelectron spectroscopy (UPS) measurements during both solid-source and gas-source molecular-beam ho moepitaxial growths on Si(100) surfaces. We found that the photoelectr on intensity associated with surface states periodically oscillates du ring Si epitaxial growth. We demonstrate that the UPS intensity oscill ation is associated with the alternation between the 2 x 1 and the 1 x 2 surface reconstructions on the Si(100) surface, which resulted from Si layer-by-layer growth.