EFFECT OF INTENSITY-MODULATED OPTICAL RADIATION ON THE DC CHARACTERISTICS OF GAAS-MESFETS

The effect of an intensity-modulated optical signal on the characteris tics of a MFSFET is studied theoretically. At a constant gate voltage, the drain current of the device can be controlled by the incident opt ical power density and the frequency of the modulating signal. The dra in current decreases with increase in modulating signal frequency at c onstant incident optical power density, while it increases with the in crease in incident optical power density for a fixed value of the modu lating signal.