A dip method to fine tune the absorbance of CdS thin polycrystalline f
ilms using the size-dependent band gap of this semiconductor is presen
ted. The method consists of preparing pure and anisotropically capped
CdS nanocrystals in an organic solvent. These particles have the prope
rty to self-connect on solid surfaces, leading to a textured homogeneo
us coating. The film can be converted thermally into a pure CdS film.
The band gap of the thin film can be fine tuned through the size of th
e particle precursor or by controlling the conversion temperature duri
ng the capping ligand thermolysis. These films should provide a good b
uffer-window layer for thin film solar cells. In fact, the optical cut
-off can be adjusted to avoid interfering with light collection. These
films are compared with others made by classical chemical bath techni
ques.