GROWTH OF GASE LAYERED COMPOUND ON A GAAS (001) SURFACE

The initial stage of the growth of GaSe on GaAs (001) has been studied by Auger electron spectroscopy, X-ray photoemission spectroscopy (XPS ), low-energy electron-loss spectroscopy (LEELS) and X-ray diffraction (XRD) as a function of deposition temperature: room temperature, 250 and 400-degrees-C. The thermal evaporation of GaSe single crystal was used with the rate 0.1 angstrom s-1 for the deposition. The LEELS spec trum of the film grown at 250-degrees-C with thickness of only 3 angst rom resembles that of GaSe single crystal, while there are some missin g loss peaks in the films grown at room temperature and 400-degrees-C. The grown films were the crystalline GaSe (001) parallel to the subst rate surface of GaAs (001). The XRD pattern of films with thickness of 1000 angstrom grown at 250-degrees-C coincided with that of GaSe sing le crystal. Since the broadening of Se 3d XPS peak was observed for th e film grown at 400-degrees-C, it is considered that the passivation s hould take place at the GaAs surface for 400-degrees-C deposition.