LAYER-BY-LAYER ANALYSIS OF A(4)B(6) THIN-FILM HETEROSTRUCTURES USING INDUCTIVELY-COUPLED PLASMA-ATOMIC FLUORESCENCE SPECTROMETRY (ICP-AFS)

The technique of layer-by-layer analysis of semiconductive A4B6 hetero structures using electrochemical etching and inductively coupled plasm a atomic fluorescence spectrometry (ICP AFS) is developed. The Norr et ching solution and electrochemical oxidation with subsequent dissoluti on of oxidized layers in acid were used to remove layers of 0.5 to sev eral microns thickness. Pb1-xEuxTe/PbTe and Pb1-xEuxSe/PbSe heterostru ctures were analyzed. The Eu content in removed layers was determined by ICP-AFS. The data on Eu depth profiles were used for the evaluation of the Eu diffusion coefficient in this heterostructures to predict t he changes of properties along the depth of the structure. The techniq ue can be applied to the analysis of semiconductive heterostructures w ith different admixtures.