RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystalliz ation, Yb migration and its optical activation were studied for Yb-imp lanted silicon. For the annealing regime 800-1000-degrees-C, the Yb se gregates both at the crystal/amorphous interface and at the surface, w hich is different from the usual segregation of Er at the crystal/amor phous interface, and the efficiency of optical activation also increas es with annealing temperature. However, the amorphous layer regrows co mpletely and no photoluminescence is observed after the annealing at 1 200-degrees-C.