P. Kengkan et al., PARTICIPATION OF EL2 IN THE DONOR ACTIVATION OF SILICON IMPLANTED INTO GAAS, Physical review. B, Condensed matter, 49(23), 1994, pp. 16309-16312
A simple model describing the electrical activation of moderate doses
of silicon implanted into GaAs is presented. It involves only the defe
cts Si(i)+ Si(Ga)+, Si(As)-, and EL2. Besides fitting available activa
tion data (carrier concentration versus silicon concentration), it als
o fits existing data describing the variation of carrier concentration
with substrate EL2 concentration.