PARTICIPATION OF EL2 IN THE DONOR ACTIVATION OF SILICON IMPLANTED INTO GAAS

Authors
KENGKAN P MEALING A MORROW RA
Citation
P. Kengkan et al., PARTICIPATION OF EL2 IN THE DONOR ACTIVATION OF SILICON IMPLANTED INTO GAAS, Physical review. B, Condensed matter, 49(23), 1994, pp. 16309-16312
Citations number
27
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
49
Issue
23
Year of publication
1994
Pages
16309 - 16312
Database
ISI
SICI code
0163-1829(1994)49:23<16309:POEITD>2.0.ZU;2-C
Abstract
A simple model describing the electrical activation of moderate doses of silicon implanted into GaAs is presented. It involves only the defe cts Si(i)+ Si(Ga)+, Si(As)-, and EL2. Besides fitting available activa tion data (carrier concentration versus silicon concentration), it als o fits existing data describing the variation of carrier concentration with substrate EL2 concentration.