M. Kuball et al., DOPING DEPENDENCE OF THE E1 AND E1-1 CRITICAL-POINTS IN HIGHLY DOPED N-TYPE AND P-TYPE GAAS - IMPORTANCE OF SURFACE BAND BENDING AND DEPLETION(LAMBDA), Physical review. B, Condensed matter, 49(23), 1994, pp. 16569-16574
Using rotating analyzer ellipsometry, we determined at room temperatur
e and at 30 K the doping dependence of the E1 and E1 + DELTA1 critical
, points of n-type highly Si-doped GaAs(100) (up to carrier concentrat
ions of 1.9 X 10(19) CM-3) exposed to air. For both temperatures the E
l and El + DELTA1 critical points shift to lower energies with increas
ing dopant concentration. This redshift, however, unexpectedly saturat
es at a dopant concentration of about 3 x 10(18) CM-3. We found these
measurements to be strongly influenced by surface effects. UHV-cleaved
GaAs(110) samples (n- and p-type), exhibiting flat bands at the surfa
ce, show a significantly smaller energy shift over the whole doping ra
nge following a power-law dependence corresponding rather well to the
predicted effect of screened impurities, i.e., dopants. We believe tha
t this represents the behavior of bulk doping. Fermi-level pinning int
roduced by hydrogen adsorption after cleaving produces a behavior simi
lar to that observed for air-exposed surfaces. These measurements are
influenced by band-bending and carrier depletion in the surface region
. Measurements of undoped material in an electric field indicate that
the presence of this field does not account for all the band-bending e
ffects. We propose that unscreening of dopants in the depletion region
makes an important contribution.