Sy. Hsu et Jm. Valles, ELECTRON-TUNNELING INTO STRONGLY DISORDERED FILMS - THE INFLUENCE OF STRUCTURE ON ELECTRON-ELECTRON INTERACTIONS, Physical review. B, Condensed matter, 49(23), 1994, pp. 16600-16604
We present measurements of the electronic tunneling density of states
of ultrathin films with sheet resistances at 8 K in the range 100 OMEG
A < R < 100 kOMEGA. We find that in the strongly disordered regime the
Coulomb anomaly in the tunneling density of states grows in strength
with R in a manner which depends strongly on film structure. These dat
a demonstrate that the effective electron-electron interactions in dis
ordered films depend on film structure in this regime. We discuss the
implications of this behavior for the properties of superconductors ne
ar the two-dimensional superconductor-to-insulator transition.