OPTOELECTRONIC PROPERTIES OF N-TYPE CDZNTE 2-DEG SINGLE-QUANTUM-WELL HETEROSTRUCTURES

Optoelectronic properties of asymmetrically strained II-VI CdZnTe sing le-quantum-well structures grown by molecular-beam epitaxy are reporte d. Indium doping CdZnTe n-type using a two-dimensional electron gas he terostructure acheived a carrier mobility of 5000 cm(2) . V-1. s(-1) a t 40 B. A shallow donor ionization energy of 14.5 meV was determined f rom Hall effect measurements, Fabrication of a large-area-mesa heteros tructure device allowed us to investigate exciton absorption of the mi xed type-I and type-II single quantum well, Control of the electron co ncentration in the quantum well allows optical absorption modulation u sing both the quantum-confined Stark effect (QCSE) and phase-space abs orption quenching. Separation of electron and hole photocurrents in di fferent layers is demonstrated and results in photogain, A heavy-hole red-shift of 9.9 meV/V due to the reverse QCSE is reported.