INVESTIGATION INTO THE REUSE OF PMOS DOSIMETERS

Radiation sensitive field effect transistors have applications as inte grating dosimeters in spacecraft, laboratories and medicine to measure the amount of radiation dose absorbed. However these dosimeters can m easure only to a maximum dose which is determined by the type and sens itivity of the RADFET being used. On reaching the maximum radiation do se these dosimeters are usually replaced. The aim of this paper is to investigate the possibility of reusable dosimeters which to-date has n ot been addressed in the published literature. This study examines the response of dosimeters which were irradiated, annealed back to their original preirradiation threshold voltage and then irradiated for a se cond time. The results of the second irradiation on suggest that reusi ng PMOS dosimeters is a feasible option.