SPACE-CHARGE EFFECTS IN SIMOX BURIED OXIDES

X-ray induced charge trapping in SIMOX buried oxides is investigated. Dose and applied field dependence is modeled by taking into account in ternal space charge effects due to hole and electron trapping. Oxide t rapped charge measured via etch-back experiments on SIMOX MOS capacito r structures reveals a good agreement with numerical simulations. Howe ver, the model is no longer valid when applied to previous data obtain ed on irradiated back-channel transistors where enhanced electron trap ping had been observed. Possible implication of this discrepancy on SI MOX electron trap nature is discussed.