GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES

Authors
VANHELLEMONT J KANIAVA A SIMOEN E TRAUWAERT MA CLAEYS C JOHLANDER B HARBOESORENSEN R ADAMS L CLAUWS P
Citation
J. Vanhellemont et al., GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES, IEEE transactions on nuclear science, 41(3), 1994, pp. 479-486
Citations number
15
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
3
Year of publication
1994
Part
1
Pages
479 - 486
Database
ISI
SICI code
0018-9499(1994)41:3<479:GAABOM>2.0.ZU;2-S
Abstract
The generation and annihilation of deep levels in diodes fabricated on n- and p-type floating zone and Czochralski silicon substrates is dis cussed as a function of the substrate parameters and the irradiation a nd thermal annealing conditions. Both low fluence irradiations with Me V protons and with the fission products of a Cf-252 source are investi gated. The presence of deep levels with densities in the range of 4 x 10(11) to 2 x 10(12) cm-3, is correlated with increase of the diode le akage current