A STUDY OF RADIATION VULNERABILITY OF FERROELECTRIC MATERIAL AND DEVICES

The radiation effects on ferroelectric material and devices are presen ted, based on commercially available samples. After recalling the back ground, effects in ferroelectric PZT capacitors are presented, concern ing dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effe cts are studied at the complete non-volatile RAM device level. Vulnera bility in dose, dose rate and neutron fluence of commercial 4 kbit fer roelectric RAM is addressed. 64 kbit results are mentioned in dose rat e. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, eq uivalence between rad(Si) and rad(PZT) is discussed in the case of low energy ''10 keV Aracor'' x-rays and Co-60 gamma rays.