APPLICATION OF TEST METHOD 1019.4 TO NONHARDENED POWER MOSFETS

Authors
KHOSROPOUR P GALLOWAY KF ZUPAC D SCHRIMPF RD CALVEL P
Citation
P. Khosropour et al., APPLICATION OF TEST METHOD 1019.4 TO NONHARDENED POWER MOSFETS, IEEE transactions on nuclear science, 41(3), 1994, pp. 555-560
Citations number
20
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
3
Year of publication
1994
Part
1
Pages
555 - 560
Database
ISI
SICI code
0018-9499(1994)41:3<555:AOTM1T>2.0.ZU;2-P
Abstract
The applicability of MIL-STD-883D Method 1019.4 to predicting the low- dose-rate radiation response of non-hardened power MOSFETs has been in vestigated. Method 1019.4 works well in providing bounds for the thres hold-voltage shift. However, it is not intended to provide an estimate of the actual DELTAV(T) due to low-dose-rate irradiation. A modified method is proposed which can yield more information on the threshold-v oltage shift at low dose rates for power MOSFETs.