RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS

Authors
FLAMENT O LERAY JL MARTIN JL MONTARON J RAFFAELLI M BLANC JP DELEVOYE E GAUTIER J PELLOIE JL DEPONCHARRA J TRUCHE R DELAGNES E DENTAN M FOURCHES N
Citation
O. Flament et al., RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS, IEEE transactions on nuclear science, 41(3), 1994, pp. 565-571
Citations number
20
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
3
Year of publication
1994
Part
1
Pages
565 - 571
Database
ISI
SICI code
0018-9499(1994)41:3<565:REOSAD>2.0.ZU;2-O
Abstract
Investigations of test circuit parameters in a mixed analog-digital te chnology (including CMOS, PJFET and NPN) are presented. The changes in electrical parameters as a function of the level of radiation up to 1 0 Mrad(SiO2) and 3.8 10(14) neutrons/cm2 are reported. Analysis pertai ns to hardness limiting mechanisms identification.