STRUCTURE OF FAST-ION CONDUCTING AND SEMICONDUCTING GLASSY CHALCOGENIDE ALLOYS

The method of isotopic substitution in neutron diffraction is used to measure the metal-metal partial structure factor S(MM)(k) for the glas sy fast ion conductor g-Ag2As3Se4 and for the glassy semiconductor g-C u2As3Se4. The remaining partial structure factors are hence separated into two functions which comprise either the M-mu (mu = As or Se) or m u-mu species. It is found that the short range order of the network fo rmer g-AsSe is not destroying on alloying with M2Se and that the most significant structural differences occur with respect to the M atom or dering.