EQUIVALENT-CIRCUIT THEORY OF SPONTANEOUS EMISSION POWER IN SEMICONDUCTOR-LASER OPTICAL AMPLIFIERS

An equivalent circuit model for a semiconductor laser amplifier (SLA) has been developed. This model can be used with a. transfer matrix met hod (TMM) to analyze the performance of a SLA. The validity of the mod el is explored in this paper by analyzing the spontaneous emission noi se power in a Fabry-Perot SLA with a uniform distribution of material gain coefficient. The result is found to be identical with that derive d by the Green function approach. The physical reasons for the validit y of the equivalent circuit model are also discussed, and possible fur ther applications of the model are suggested.