BOND LENGTHS AROUND ISOVALENT IMPURITIES AND IN SEMICONDUCTOR SOLID-SOLUTIONS

Authors
Citation
Sg. Shen, BOND LENGTHS AROUND ISOVALENT IMPURITIES AND IN SEMICONDUCTOR SOLID-SOLUTIONS, Journal of physics. Condensed matter, 6(24), 1994, pp. 4449-4456
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
6
Issue
24
Year of publication
1994
Pages
4449 - 4456
Database
ISI
SICI code
0953-8984(1994)6:24<4449:BLAIIA>2.0.ZU;2-U
Abstract
Using a bond orbital model, we calculate the bond length and polarity of semiconductors, the symmetric relaxations around isovalent impuriti es in semiconductor-impurity systems, and the bond-length variations i n solid solutions A1-xBxC of semiconductor alloys. We find that small impurities have a large relaxation, but the variations in bond energy are smaller than those of large impurities. The results are compared w ith other theoretical and experimental results and are found to be in excellent agreement with experiments.