NUMERICAL MODELING AND CHARACTERIZATION OF ELECTROLYTE INSULATOR SEMICONDUCTOR SENSOR SYSTEMS

Citation
W. Treichel et al., NUMERICAL MODELING AND CHARACTERIZATION OF ELECTROLYTE INSULATOR SEMICONDUCTOR SENSOR SYSTEMS, Fresenius' journal of analytical chemistry, 349(5), 1994, pp. 385-390
Citations number
14
Categorie Soggetti
Chemistry Analytical
ISSN journal
09370633
Volume
349
Issue
5
Year of publication
1994
Pages
385 - 390
Database
ISI
SICI code
0937-0633(1994)349:5<385:NMACOE>2.0.ZU;2-3
Abstract
A model is proposed to describe integrated ion-sensitive devices based on Electrolyte/Insulator/Semiconductor systems. In particular a speci al type of sensor will be discussed based on a pure Electrolyte/Insula tor/Semiconductor structure in the constant capacitance mode. The foll owing models will serve to describe the sensor effects: The site-bindi ng model for pH-sensors and a single-site model for pH-sensors. The th eory of the field effect has been integrated into the complete model. In this way pH/pF responses and quasistatic (lf) as well as rf C(V) ch aracteristics can be simulated. A comparison between measurements and simulations can be made for the pH EIS structures with ZrO2, SrTiO3 an d pF EIS structures with LaF3.