W. Treichel et al., NUMERICAL MODELING AND CHARACTERIZATION OF ELECTROLYTE INSULATOR SEMICONDUCTOR SENSOR SYSTEMS, Fresenius' journal of analytical chemistry, 349(5), 1994, pp. 385-390
A model is proposed to describe integrated ion-sensitive devices based
on Electrolyte/Insulator/Semiconductor systems. In particular a speci
al type of sensor will be discussed based on a pure Electrolyte/Insula
tor/Semiconductor structure in the constant capacitance mode. The foll
owing models will serve to describe the sensor effects: The site-bindi
ng model for pH-sensors and a single-site model for pH-sensors. The th
eory of the field effect has been integrated into the complete model.
In this way pH/pF responses and quasistatic (lf) as well as rf C(V) ch
aracteristics can be simulated. A comparison between measurements and
simulations can be made for the pH EIS structures with ZrO2, SrTiO3 an
d pF EIS structures with LaF3.