INVESTIGATION ON THE EQUILIBRIUM VAPOR-PRESSURE OVER A GAAS MELT

Authors
HEGEWALD S HEIN K FRANK C JOHN M BUHRIG E
Citation
S. Hegewald et al., INVESTIGATION ON THE EQUILIBRIUM VAPOR-PRESSURE OVER A GAAS MELT, Crystal research and technology, 29(4), 1994, pp. 549-554
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
29
Issue
4
Year of publication
1994
Pages
549 - 554
Database
ISI
SICI code
0232-1300(1994)29:4<549:IOTEVO>2.0.ZU;2-J
Abstract
Investigations of the equilibrium vapour pressure over GaAs were carri ed out by a Bourdon manometer in the temperature range of 1170 - 1260- degrees-C. By means of this method it is possible to measure the vapou r pressure in a closed system with high accuracy. At the melting point the vapour pressure is 73 +/- 4 kPa over polycrystalline GaAs produce d by low-pressure synthesis and 71 +/- 4 kPa over monocrystalline hori zontal gradient freezing material. The experimental and the calculated values were compared.