EFFECT OF A SULFUR LAYER ON OBLIQUELY DEPOSITED TITANIUM THIN-FILMS FOR A HYDROGEN ADSORPTION MECHANISM

Citation
M. Singh et al., EFFECT OF A SULFUR LAYER ON OBLIQUELY DEPOSITED TITANIUM THIN-FILMS FOR A HYDROGEN ADSORPTION MECHANISM, International journal of hydrogen energy, 19(8), 1994, pp. 709-712
Citations number
17
Categorie Soggetti
Energy & Fuels","Environmental Sciences","Physics, Atomic, Molecular & Chemical
ISSN journal
03603199
Volume
19
Issue
8
Year of publication
1994
Pages
709 - 712
Database
ISI
SICI code
0360-3199(1994)19:8<709:EOASLO>2.0.ZU;2-G
Abstract
Titanium thin films of about 1050 angstrom thickness were obliquely de posited at a pressure of 5 x 10(-5) torr by thermal evaporation on to a glass substrate at room temperature. The resistance of the films dep osited at different angles (theta = 0-degrees, 30-degrees, 45-degrees, 60-degrees, 75-degrees) and absorption of hydrogen increases with the angle of deposition. The change in resistance value is taken as a mea sure of the amount of hydrogen absorbed in the samples. It is observed that the amount of hydrogen absorbed increases with deposition angle which is due to an increase in the porosity of thin films. The sulphur layer (thickness 160 angstrom) deposited on the titanium thin film wa s found to produce a marked improvement in the properties of thin film for hydrogen storage and charging rate becomes faster in comparison t o titanium thin films.