X. Xu et al., PREDICTION OF BREAKDOWN IN SF6 UNDER IMPULSE CONDITIONS, IEEE transactions on dielectrics and electrical insulation, 3(6), 1996, pp. 836-842
Prediction of fast transient voltage-induced breakdown in quasi-homoge
neous field geometries requires compounding the breakdown probability
over time, while taking into account the field-dependent probability o
f electron detachment. In this paper, a breakdown probability model ha
s been developed to predict the impulse breakdown under quasi-uniform
fields, as this is the fundamental condition, the knowledge of which f
acilitates computation of breakdown probability under more complex con
ditions. The model will facilitate computation of breakdown probabilit
y under more complex conditions. It accounts for the effect of the str
eamer formation length on the critical volume and the probability of i
nitial electron production by electron detachment from negative ions.
The proposed model has been verified through comparison with the measu
red impulse breakdown probabilities. The predicted breakdown probabili
ties are in good agreement (+/-10%) with those measured.