PHOTOELECTRIC DEEP-LEVEL RELAXATION SPECTROSCOPY IN CDS SINGLE-CRYSTALS WITH DEVIATIONS FROM STOICHIOMETRY IMPOSED DURING THE GROWTH-PROCESS

The method of photoelectric relaxation spectroscopy has been used to s tudy the properties of deep levels in highly pure CdS single crystals. The crystals differed from each other in the magnitude of the deviati ons from stoichiometry. These deviations were imposed by means of cont rolled changes in the technological conditions of the growth from the vapor phase. The characteristics of those traps, for both electrons an d holes, which are most prominent in the spectra have been determined. The technological conditions required for the growth of crystals whos e composition corresponds most closely to the stoichiometry for the gi ven growth method have been determined. It has been confirmed that the phenomenological model of photoelectric relaxation spectroscopy is va lid for describing photoelectric processes in high-resistance cadmium sulfide.