ELECTRON SPECTRUM OF 2D AND 3D QUANTUM-WELLS BASED ON NARROW-GAP SEMICONDUCTORS

Authors
IDLIS BG USMANOV MS
Citation
Bg. Idlis et Ms. Usmanov, ELECTRON SPECTRUM OF 2D AND 3D QUANTUM-WELLS BASED ON NARROW-GAP SEMICONDUCTORS, Semiconductors, 28(5), 1994, pp. 450-452
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
5
Year of publication
1994
Pages
450 - 452
Database
ISI
SICI code
1063-7826(1994)28:5<450:ESO2A3>2.0.ZU;2-X
Abstract
Two- and three-dimensional quantum wells formed by narrow-gap semicond uctors with bands in a relative inversion are used as examples to stud y the spectra of boundary states. Several discrete levels differing in total angular momentum are split off from the upper and lower bands o f the bulk spectrum.