PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN EPITAXIAL MNXHG1-XTE LAYERS AT LOW-TEMPERATURES

Citation
Sg. Gasanzade et al., PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN EPITAXIAL MNXHG1-XTE LAYERS AT LOW-TEMPERATURES, Semiconductors, 28(5), 1994, pp. 470-473
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
28
Issue
5
Year of publication
1994
Pages
470 - 473
Database
ISI
SICI code
1063-7826(1994)28:5<470:PAPEIE>2.0.ZU;2-T
Abstract
The spectra, temperature dependence, and field dependence of the photo magnetic effect, the photoconductivity, and the Hall coefficient RH ha ve been measured in epitaxial Mn(x) Hg1-xTe/CdTe films (x=0.09-0.012). The films were grown by liquid-phase epitaxy. A structural feature of R(H) in the temperature region 20-125 K is explained in a two-layer m odel. An anomalous photomagnetic effect has been observed. It is linke d with a varigap nature of the epitaxial layers near the heterojunctio n. At liquid-helium temperature, 4.2 K, the photomagnetic effect is do minated by a heating component, which oscillates in a magnetic field. The data on the photoconductivity reveal the temperature dependence of the carrier lifetime in the epitaxial layers over the temperature ran ge 4.2-290 K.