EFFECT OF ELECTRON-BOMBARDMENT ON THE ELECTRICAL-PROPERTIES OF PB1-XSNXTE(IN) ALLOYS

Citation
Ep. Skipetrov et al., EFFECT OF ELECTRON-BOMBARDMENT ON THE ELECTRICAL-PROPERTIES OF PB1-XSNXTE(IN) ALLOYS, Semiconductors, 28(5), 1994, pp. 478-483
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
28
Issue
5
Year of publication
1994
Pages
478 - 483
Database
ISI
SICI code
1063-7826(1994)28:5<478:EOEOTE>2.0.ZU;2-Y
Abstract
The effect of bombardment by fast electrons followed by hydrostatic co mpression on the electrical properties of Pb1-xSnxTe[In] alloys has be en studied. The electron energy was E = 6 MeV, and the bombardment dos e PHI less-than-or-equal-to 7.7 . 10(17) cm-2 . The bombardment was ca rried out at 300 K. The hydrostatic compression reached pressures P le ss-than-or-equal-to 15 kbar. The properties were measured while extern al radiation was screened out and also during controlled illumination by a thermal IR source. The results show that the electron bombardment has essentially no effect on the electrical properties of the alloys, the magnitude of the steady-state photoconductivity, or the height (W ) of the barrier between localized and band states in these alloys. Th e results are explained on the basis of a model energy spectrum propos ed previously for undoped Pb1-xSnxTe alloys bombarded by electrons. Th at model assumes a rigid stabilization of the Fermi level by an indium impurity level in the test samples.