EFFECT OF HEAT-TREATMENT CONDITIONS ON THE SURFACE-MORPHOLOGY OF GALLIUM-ARSENIDE GROWN ON VICINAL GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY

Authors
LEDENTSOV NN GURYANOV GM TSYRLIN GE PETROV VN SAMSONENKO YB GOLUBOK AO TIPISEV SY
Citation
Nn. Ledentsov et al., EFFECT OF HEAT-TREATMENT CONDITIONS ON THE SURFACE-MORPHOLOGY OF GALLIUM-ARSENIDE GROWN ON VICINAL GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(5), 1994, pp. 526-527
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
5
Year of publication
1994
Pages
526 - 527
Database
ISI
SICI code
1063-7826(1994)28:5<526:EOHCOT>2.0.ZU;2-6