MODULATED REFLECTANCE AND RESONANT RAMAN-SCATTERING OF GAAS QUANTUM WIRES GROWN ON NONPLANAR SUBSTRATES

Citation
R. Rinaldi et al., MODULATED REFLECTANCE AND RESONANT RAMAN-SCATTERING OF GAAS QUANTUM WIRES GROWN ON NONPLANAR SUBSTRATES, Applied physics letters, 64(26), 1994, pp. 3587-3589
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
64
Issue
26
Year of publication
1994
Pages
3587 - 3589
Database
ISI
SICI code
0003-6951(1994)64:26<3587:MRARRO>2.0.ZU;2-Q
Abstract
Modulated reflectance spectroscopy and resonant Raman scattering have been used to study the quantized states of crescent-shaped GaAs quantu m wires. Distinct one-dimensional excitonic transitions originating fr om the quantum wires together with the expected resonances from the be nt quantum wells are observed. The quantum wire transition energies co mpare very well with those calculated using a V-shaped potential deriv ed from transmission electron microscopy measurements of the lateral v ariation of the GaAs well width. The spectroscopic techniques employed here provide alternative methods of probing the confined states in qu antum wires of low luminescence efficiency.