PHOTOLUMINESCENCE SPECTRUM REDSHIFTING OF POROUS SILICON BY A POLYMERIC CARBON LAYER

Authors
TESCHKE O GALEMBECK F GONCALVES MC DAVANZO CU
Citation
O. Teschke et al., PHOTOLUMINESCENCE SPECTRUM REDSHIFTING OF POROUS SILICON BY A POLYMERIC CARBON LAYER, Applied physics letters, 64(26), 1994, pp. 3590-3592
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
26
Year of publication
1994
Pages
3590 - 3592
Database
ISI
SICI code
0003-6951(1994)64:26<3590:PSROPS>2.0.ZU;2-6
Abstract
Photoluminescence of porous silicon at room temperature shifts to a la rger wavelength in low-resistivity Si samples (0.006 OMEGA cm) when co mpared to the one emitted by high resistivity samples (0.4 OMEGA cm). This shift is associated with a coating of hydrocarbon over the porous silicon structure. The hydrocarbon coating was identified by electron energy loss spectroscopy imaging together with infrared spectroscopy.